@misc{10481/58590,
year = {2019},
month = {11},
url = {http://hdl.handle.net/10481/58590},
abstract = {This work investigates the sources of resistive switching (RS) in recently reported
laser-fabricated graphene oxide memristors by means of two numerical analysis tools linked to
the Time Series Statistical Analysis and the use of the Quantum Point Contact Conduction model.
The application of both numerical procedures points to the existence of a filament connecting the
electrodes that may be interrupted at a precise point within the conductive path, resulting in resistive
switching phenomena. These results support the existing model attributing the memristance of
laser-fabricated graphene oxide memristors to the modification of a conductive path stoichiometry
inside the graphene oxide.},
organization = {The authors thank the support of the Spanish Ministry of Science, Innovation and Universities
under projects TEC2017-89955-P, TEC2017-84321-C4-3-R, MTM2017-88708-P and project PGC2018-098860-B-I00
(MCIU/AEI/FEDER, UE), and the predoctoral grant FPU16/01451.},
publisher = {MDPI},
keywords = {Memristor},
keywords = {RRAM},
keywords = {Variability},
keywords = {Time series modeling},
keywords = {Autocovariance},
keywords = {Graphene oxide},
keywords = {Lasers},
title = {Resistive Switching and Charge Transport in Laser-Fabricated Graphene Oxide Memristors: A Time Series and Quantum Point Contact Modeling Approach},
doi = {10.3390/ma12223734},
author = {Rodríguez Santiago, Noel and Maldonado, D. and Romero Maldonado, Francisco Javier and Alonso Morales, Francisco J. and Aguilera Del Pino, Ana María and Godoy Medina, Andrés and Jiménez Molinos, Francisco and García Ruiz, Francisco Javier and Roldán Aranda, Juan Bautista},
}