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dc.contributor.authorNavarro Moral, Carlos 
dc.contributor.authorDuan, Meng
dc.contributor.authorParihar, Mukta Singh
dc.contributor.authorAdamu-Lema, Fikru
dc.contributor.authorCoseman, Stefan
dc.contributor.authorLacord, Joris
dc.contributor.authorLee, Kyunghwa
dc.contributor.authorSampedro Matarín, Carlos 
dc.contributor.authorCheng, Binjie
dc.contributor.authorEl Dirani, Hassam
dc.contributor.authorBarbe, Jean-Charles
dc.contributor.authorFonteneau, Pascal
dc.contributor.authorKim, Seong
dc.contributor.authorCristoloveanu, Sorin
dc.contributor.authorBawedin, Maryline
dc.contributor.authorMillar, Campbell
dc.contributor.authorGaly, Philippe
dc.contributor.authorLe Royer, Cyrille
dc.contributor.authorKarg, Sigfried
dc.contributor.authorRiel, Heike
dc.contributor.authorWells, Paul
dc.contributor.authorKim, Yong Tae
dc.contributor.authorAsenov, Asen
dc.contributor.authorGámiz Pérez, Francisco Jesús 
dc.date.accessioned2019-10-21T07:53:14Z
dc.date.available2019-10-21T07:53:14Z
dc.date.issued2017-10-31
dc.identifier.urihttp://hdl.handle.net/10481/57442
dc.description.abstract2-D numerical simulations are used to demonstrate the Z2-FET as a competitive embedded capacitorless dynamic random access memory cell for low-power applications. Experimental results in 28-nm fully depleted silicon on insulator technology are used to validate the simulations prior to downscaling tests. Default scaling, without any structure optimization, and enhanced scaling scenarios are considered before comparing the bit cell area consumption and integration density with other eDRAM cells in the literature.es_ES
dc.description.sponsorship2016 REMINDER project (grant agreement No 687931) is thanked for financial supportes_ES
dc.language.isoenges_ES
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivs 3.0 License
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subject1T-DRAMes_ES
dc.subjectZ2-FETes_ES
dc.subjectCapacitorlesses_ES
dc.subjectFully depleted (FD)es_ES
dc.titleZ2-FET as Capacitor-Less eDRAM Cell For High-Density Integrationes_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.identifier.doi10.1109/TED.2017.2759308


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