Simulation of 2D semiconductor based MOSFETs

Identificadores
URI: http://hdl.handle.net/10481/55920
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Autor
Toral López, Alejandro; González-Medina, Jose María; González Marín, Enrique; Marin-Sanchez, Antonio; Medina, Alberto; García Ruiz, Francisco Javier; Godoy Medina, Andrés
Materia
MOSFET
 
2D materials
 
Drift-Diffusion
 
Fecha
2018-11
Patrocinador
Pervasive Electronics Advance Research Laboratory (PEARL) TIC-250
Resumen
In this work we address the simulation of 2D materials based Field Effect Transistors advancing a simple method to take into account the Density of States of arbitrary materials in a Drift-Diffusion transport scheme.
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