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   <ow:Publication rdf:about="oai:digibug.ugr.es:10481/55920">
      <dc:title>Simulation of 2D semiconductor based MOSFETs</dc:title>
      <dc:creator>Toral López, Alejandro</dc:creator>
      <dc:creator>González-Medina, Jose María</dc:creator>
      <dc:creator>González Marín, Enrique</dc:creator>
      <dc:creator>Marin-Sanchez, Antonio</dc:creator>
      <dc:creator>Medina, Alberto</dc:creator>
      <dc:creator>García Ruiz, Francisco Javier</dc:creator>
      <dc:creator>Godoy Medina, Andrés</dc:creator>
      <dc:subject>MOSFET</dc:subject>
      <dc:subject>2D materials</dc:subject>
      <dc:subject>Drift-Diffusion</dc:subject>
      <dc:description>In this work we address the simulation of 2D materials based Field Effect Transistors advancing a simple method to take into account the Density of States of arbitrary materials in a Drift-Diffusion transport scheme.</dc:description>
      <dc:date>2019-06-03T05:53:43Z</dc:date>
      <dc:date>2019-06-03T05:53:43Z</dc:date>
      <dc:date>2018-11</dc:date>
      <dc:type>conference output</dc:type>
      <dc:identifier>http://hdl.handle.net/10481/55920</dc:identifier>
      <dc:language>eng</dc:language>
      <dc:rights>open access</dc:rights>
   </ow:Publication>
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