TY  - GEN 
AU  - Toral López, Alejandro
AU  - González-Medina, Jose María
AU  - González Marín, Enrique
AU  - Marin-Sanchez, Antonio
AU  - Medina, Alberto
AU  - García Ruiz, Francisco Javier
AU  - Godoy Medina, Andrés
PY  - 2018
UR  - http://hdl.handle.net/10481/55920
AB  - In this work we address the simulation of 2D materials based Field Effect Transistors advancing a simple method to take into account the Density of States of arbitrary materials in a Drift-Diffusion transport scheme.
LA  - eng
KW  - MOSFET
KW  - 2D materials
KW  - Drift-Diffusion
TI  - Simulation of 2D semiconductor based MOSFETs
ER  -