Strain effects on effective masses for MoS2 monolayers
Metadata
Show full item recordAuthor
Ortiz, E. R.; Biel, Blanca; Donetti, Luca; Godoy Medina, Andrés; Gámiz Pérez, Francisco JesúsEditorial
IOP Publishing
Materia
Strain effects Metal oxide semiconductors
Date
2015Referencia bibliográfica
Ortiz, E.R.; et al. Strain effects on effective masses for MoS2 monolayers. Euro-TMCS I, 609: 012008 (2015). [http://hdl.handle.net/10481/37242]
Abstract
We have studied the effects of both intrinsic and external factors, such as strain, substrate and electric field, over a MoS2 monolayer, via DFT simulations. From these simulations we computed the system's bandstructure and evaluate the bandgap values, extracting the effective masses as well. Our calculations show a transition between direct and indirect gaps when strain is applied, and also that the bandstructure is barely affected by the presence of a substrate or an external electric field with values up to 1 V/Å.