Strain effects on effective masses for MoS2 monolayers Ortiz, E. R. Biel, Blanca Donetti, Luca Godoy Medina, Andrés Gámiz Pérez, Francisco Jesús Strain effects Metal oxide semiconductors We have studied the effects of both intrinsic and external factors, such as strain, substrate and electric field, over a MoS2 monolayer, via DFT simulations. From these simulations we computed the system's bandstructure and evaluate the bandgap values, extracting the effective masses as well. Our calculations show a transition between direct and indirect gaps when strain is applied, and also that the bandstructure is barely affected by the presence of a substrate or an external electric field with values up to 1 V/Å. 2015-09-03T11:54:24Z 2015-09-03T11:54:24Z 2015 info:eu-repo/semantics/article Ortiz, E.R.; et al. Strain effects on effective masses for MoS2 monolayers. Euro-TMCS I, 609: 012008 (2015). [http://hdl.handle.net/10481/37242] 1742-6588 http://hdl.handle.net/10481/37242 10.1088/1742-6596/609/1/012008 eng http://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License IOP Publishing