@misc{10481/37242,
year = {2015},
url = {http://hdl.handle.net/10481/37242},
abstract = {We have studied the effects of both intrinsic and external factors, such as strain, substrate and electric field, over a MoS2 monolayer, via DFT simulations. From these simulations we computed the system's bandstructure and evaluate the bandgap values, extracting the effective masses as well. Our calculations show a transition between direct and indirect gaps when strain is applied, and also that the bandstructure is barely affected by the presence of a substrate or an external electric field with values up to 1 V/Å.},
publisher = {IOP Publishing},
keywords = {Strain effects},
keywords = {Metal oxide semiconductors},
title = {Strain effects on effective masses for MoS2 monolayers},
doi = {10.1088/1742-6596/609/1/012008},
author = {Ortiz, E. R. and Biel, Blanca and Donetti, Luca and Godoy Medina, Andrés and Gámiz Pérez, Francisco Jesús},
}