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Study of the Gate Capacitance of GaAs, InAs and InGaAs Nanowires
dc.contributor.author | González Marín, Enrique | |
dc.contributor.author | García Ruiz, Francisco Javier | |
dc.contributor.author | Tienda-Luna, Isabel María | |
dc.contributor.author | Godoy Medina, Andrés | |
dc.contributor.author | Gámiz Pérez, Francisco Jesús | |
dc.date.accessioned | 2014-09-08T09:37:22Z | |
dc.date.available | 2014-09-08T09:37:22Z | |
dc.date.issued | 2012-05 | |
dc.identifier.citation | González-Marín, E.; et al. Study of the Gate Capacitance of GaAs, InAs and InGaAs Nanowires. In: 36 th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2012). Island of Porquerolles (France), 28-30 may 2012. [http://hdl.handle.net/10481/32936] | es_ES |
dc.identifier.uri | http://hdl.handle.net/10481/32936 | |
dc.description.abstract | In this work, a simulation-based study of the gate capacitance of III-V nanowires is performed by using a 2D Schrödinger-Poisson solver. The effective mass approximation, including non-parabolic corrections, is used to model the semiconductor conduction band. Also,wave-function penetration into the gate dielectric is considered. We assess the impact of parameters such as the gate-insulator effective mass and the satellite conduction band valleys energy offsets. | es_ES |
dc.description.sponsorship | Work supported by the projects P09-TIC-4873, FIS-2008-05805 and FIS-2011-26005. E. González Marín also acknowledges the FPU program. | es_ES |
dc.language.iso | eng | es_ES |
dc.subject | III-V compound semiconductors | es_ES |
dc.subject | Non-parabolic relationship | es_ES |
dc.subject | Nanowire | es_ES |
dc.subject | Density of states | es_ES |
dc.subject | Gate capacitance | es_ES |
dc.title | Study of the Gate Capacitance of GaAs, InAs and InGaAs Nanowires | es_ES |
dc.type | conference output | es_ES |
dc.rights.accessRights | open access | es_ES |