Study of the Gate Capacitance of GaAs, InAs and InGaAs Nanowires
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Identificadores
URI: http://hdl.handle.net/10481/32936Exportar
Metadatos
Afficher la notice complèteMateria
III-V compound semiconductors Non-parabolic relationship Nanowire Density of states Gate capacitance
Date
2012-05Referencia bibliográfica
González-Marín, E.; et al. Study of the Gate Capacitance of GaAs, InAs and InGaAs Nanowires. In: 36 th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2012). Island of Porquerolles (France), 28-30 may 2012. [http://hdl.handle.net/10481/32936]
Résumé
In this work, a simulation-based study of the gate capacitance of III-V nanowires is performed by using a 2D Schrödinger-Poisson solver. The effective mass approximation, including non-parabolic corrections, is
used to model the semiconductor conduction band. Also,wave-function penetration into the gate dielectric is considered. We assess the impact of parameters such as the gate-insulator effective mass and the satellite conduction band valleys energy offsets.