Study of the Gate Capacitance of GaAs, InAs and InGaAs Nanowires

Identificadores
URI: http://hdl.handle.net/10481/32936
Exportar
RISMendeleyBibtex
Estadísticas
Ver Estadísticas de uso
Metadatos
Mostrar el registro completo del ítem
Autor
González Marín, Enrique; García Ruiz, Francisco Javier; Tienda-Luna, Isabel María; Godoy Medina, Andrés; Gámiz Pérez, Francisco Jesús
Materia
III-V compound semiconductors
 
Non-parabolic relationship
 
Nanowire
 
Density of states
 
Gate capacitance
 
Fecha
2012-05
Referencia bibliográfica
González-Marín, E.; et al. Study of the Gate Capacitance of GaAs, InAs and InGaAs Nanowires. In: 36 th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2012). Island of Porquerolles (France), 28-30 may 2012. [http://hdl.handle.net/10481/32936]
Patrocinador
Work supported by the projects P09-TIC-4873, FIS-2008-05805 and FIS-2011-26005. E. González Marín also acknowledges the FPU program.
Resumen
In this work, a simulation-based study of the gate capacitance of III-V nanowires is performed by using a 2D Schrödinger-Poisson solver. The effective mass approximation, including non-parabolic corrections, is used to model the semiconductor conduction band. Also,wave-function penetration into the gate dielectric is considered. We assess the impact of parameters such as the gate-insulator effective mass and the satellite conduction band valleys energy offsets.
Colecciones