A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization

Gámiz Pérez, Francisco Jesús; Roldán Aranda, Juan Bautista; López Villanueva, Juan Antonio

doi:10.1155/1998/94915

VLSI Design - 1998 - Gámiz - A ‐SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization.pdf (548.1Kb)

Identificadores

URI: https://hdl.handle.net/10481/98131

DOI: 10.1155/1998/94915

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Editorial

Wiley

Materia

Silicon carbide

inversion layer

high field transport properties

Fecha

1998-01-01

Referencia bibliográfica

Gámiz, F., Roldán, J. B., López-Villanueva, J. A., A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization, VLSI Design, 8, 094915, 4 pages, 1998. https://doi.org/10.1155/1998/94915

Resumen

Electron transport properties in SiC quantized inversion layers have been studied by means of a Monte Carlo procedure. It has been observed that the contribution of polaroptical phonon scattering produces a significant influence of the effective-electric field on the high longitudinal field transport regime, this being the main difference of SiC with respect to standard Si inversion layers. The energy- and momentum-relaxation times have been calculated and the results suggest that electron velocity overshoot effects are less important than in Si MOSFETs. The electron mobility is not very different from their silicon counterparts, but the saturation velocity is higher.

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