A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization Gámiz Pérez, Francisco Jesús Roldán Aranda, Juan Bautista López Villanueva, Juan Antonio Silicon carbide inversion layer high field transport properties Electron transport properties in SiC quantized inversion layers have been studied by means of a Monte Carlo procedure. It has been observed that the contribution of polaroptical phonon scattering produces a significant influence of the effective-electric field on the high longitudinal field transport regime, this being the main difference of SiC with respect to standard Si inversion layers. The energy- and momentum-relaxation times have been calculated and the results suggest that electron velocity overshoot effects are less important than in Si MOSFETs. The electron mobility is not very different from their silicon counterparts, but the saturation velocity is higher. 2024-12-17T11:14:56Z 2024-12-17T11:14:56Z 1998-01-01 journal article Gámiz, F., Roldán, J. B., López-Villanueva, J. A., A β-SiC MOSFET Monte Carlo Simulator Including Inversion Layer Quantization, VLSI Design, 8, 094915, 4 pages, 1998. https://doi.org/10.1155/1998/94915 https://hdl.handle.net/10481/98131 10.1155/1998/94915 eng http://creativecommons.org/licenses/by/4.0/ open access Atribución 4.0 Internacional Wiley