Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis
Metadatos
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Elsevier
Materia
Memristive device Resistive switching Parameters extraction Variability Reset stop voltage Gate voltage Circuit breaker simulation
Fecha
2024-07-25Referencia bibliográfica
D. Maldonado et al. Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis. Materials Science in Semiconductor Processing 182 (2024) 108726. https://doi.org/10.1016/j.mssp.2024.108726
Patrocinador
MCIN/AEI/10.13039/501100011033 PID2022-139586NB-C44; FEDER, EU; Federal Ministry of Education and Research of Germany 16ME0092Resumen
Memristive devices, particularly resistive random access memory (RRAM) cells based on hafnium oxide (HfO₂) dielectrics, exhibit promising characteristics for a wide range of applications. In spite of their potential, issues related to intrinsic variability and the need for precise simulation tools and modeling methods remain a medium-term hurdle. This study addresses these challenges by investigating the resistive switching (RS) behavior of different 1T1R HfO₂-based memristive devices under various experimental conditions. Through a comprehensive experimental analysis, we extract RS parameters using different numerical techniques to understand the cycle-to-cycle (C2C) and device-to-device (D2D) variability. Additionally, we employ advanced simulation methodologies, including circuit breaker-based 3D simulation, to shed light on our experimental findings and provide a theoretical framework to disentangle the switching phenomena. Our results offer valuable insights into the RS mechanisms and variability, contributing to the improvement of robust parameter extraction methods, which are essential for the industrial application of memristive devices.