TY  - GEN 
AU  - Maldonado Correa, David
AU  - Cantudo Gómez, Antonio
AU  - Roldán Aranda, Juan Bautista
AU  - Pérez, Eduardo
PY  - 2024
UR  - https://hdl.handle.net/10481/93745
AB  - Memristive devices, particularly resistive random access memory (RRAM) cells based on hafnium oxide (HfO₂) dielectrics, exhibit promising characteristics for a wide range of applications. In spite of their potential, issues related to intrinsic...
LA  - eng
PB  - Elsevier
KW  - Memristive device
KW  - Resistive switching
KW  - Parameters extraction
KW  - Variability
KW  - Reset stop voltage
KW  - Gate voltage
KW  - Circuit breaker simulation
TI  - Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis
DO  - 10.1016/j.mssp.2024.108726
ER  -