Simulations of 2-D Materials-Based Field Effect Transistors for Quantum Cascade Detectors

Abstract

We explore through numerical simulations the possibility of exploiting 2-D materials (2DMs)-based field effect transistors (FETs) as read-out devices for quantum cascade (QC) detectors. For this purpose, a deep investigation of the device parameter space has been performed while considering different 2DMs as channel material, such as graphene and transition metal dichalcogenides (TMDs), considering both short- and long-channel devices. We find that while graphene offers the highest current density for a given impinging power, it shows higher OFF-currents as compared to other solutions based on TMDs, which, eventually, can represent a better choice for this particular application.