Simulations of 2-D Materials-Based Field Effect Transistors for Quantum Cascade Detectors

Cannavó, Emmanuele; Marian, Damiano; González Marín, Enrique; Tredicucci, Alessandro; Fiori, Gianluca

doi:10.1109/TED.2023.3332073

Simulations_of_2-D_Materials.pdf (9.575Mb)

Identificadores

URI: https://hdl.handle.net/10481/91614

DOI: 10.1109/TED.2023.3332073

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Editorial

Institute of Electrical and Electronics Engineers

Materia

2-D materials (2DMs)

Ballistic transport

Diffusive transport

Fecha

2023-11-20

Referencia bibliográfica

E. Cannavò, D. Marian, E. G. Marin, A. Tredicucci and G. Fiori, "Simulations of 2-D Materials-Based Field Effect Transistors for Quantum Cascade Detectors," in IEEE Transactions on Electron Devices, vol. 71, no. 1, pp. 630-636, Jan. 2024, doi: 10.1109/TED.2023.3332073

Patrocinador

European Project ERC PEP2D under Contract 770047; European Union’s Horizon 2020 Research and Innovation Program under the grant agreements Graphene Flagship Core 3 under Contract 881603; National Center for HPC, Big Data and Quantum Computing (HPC) under Project CN00000013

Resumen

We explore through numerical simulations the possibility of exploiting 2-D materials (2DMs)-based field effect transistors (FETs) as read-out devices for quantum cascade (QC) detectors. For this purpose, a deep investigation of the device parameter space has been performed while considering different 2DMs as channel material, such as graphene and transition metal dichalcogenides (TMDs), considering both short- and long-channel devices. We find that while graphene offers the highest current density for a given impinging power, it shows higher OFF-currents as compared to other solutions based on TMDs, which, eventually, can represent a better choice for this particular application.

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