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Modeling of the temperature effects in filamentary-type resistive switching memories using quantum point-contact theory
| dc.contributor.author | Calixto Molina, Manuel | |
| dc.date.accessioned | 2024-01-02T10:05:04Z | |
| dc.date.available | 2024-01-02T10:05:04Z | |
| dc.date.issued | 2020 | |
| dc.identifier.uri | https://hdl.handle.net/10481/86467 | |
| dc.language.iso | eng | es_ES |
| dc.rights | Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License | es_ES |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/ | es_ES |
| dc.title | Modeling of the temperature effects in filamentary-type resistive switching memories using quantum point-contact theory | es_ES |
| dc.type | journal article | es_ES |
| dc.rights.accessRights | open access | es_ES |
| dc.identifier.doi | https://doi.org/10.1088/1361-6463/ab85e5 | |
| dc.type.hasVersion | VoR | es_ES |
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