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Modeling of the temperature effects in filamentary-type resistive switching memories using quantum point-contact theory

dc.contributor.authorCalixto Molina, Manuel 
dc.date.accessioned2024-01-02T10:05:04Z
dc.date.available2024-01-02T10:05:04Z
dc.date.issued2020
dc.identifier.urihttps://hdl.handle.net/10481/86467
dc.language.isoenges_ES
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivs 3.0 Licensees_ES
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es_ES
dc.titleModeling of the temperature effects in filamentary-type resistive switching memories using quantum point-contact theoryes_ES
dc.typejournal articlees_ES
dc.rights.accessRightsopen accesses_ES
dc.identifier.doihttps://doi.org/10.1088/1361-6463/ab85e5
dc.type.hasVersionVoRes_ES


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