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dc.contributor.authorAskar, Abdelrahman M.
dc.contributor.authorPasadas Cantos, Francisco 
dc.date.accessioned2023-11-02T07:45:42Z
dc.date.available2023-11-02T07:45:42Z
dc.date.issued2023-09-27
dc.identifier.citationAskar, A.M., Palacios, P., Pasadas, F. et al. Two-dimensional tellurium-based diodes for RF applications. npj 2D Mater Appl 7, 70 (2023). [https://doi.org/10.1038/s41699-023-00433-w]es_ES
dc.identifier.urihttps://hdl.handle.net/10481/85398
dc.description.abstractThe research of two-dimensional (2D) Tellurium (Te) or tellurene is thriving to address current challenges in emerging thin-film electronic and optoelectronic devices. However, the study of 2D-Te-based devices for high-frequency applications is still lacking in the literature. This work presents a comprehensive study of two types of radio frequency (RF) diodes based on 2D-Te flakes and exploits their distinct properties in two RF applications. First, a metal-insulator-semiconductor (MIS) structure is employed as a nonlinear device in a passive RF mixer, where the achieved conversion loss at 2.5 GHz and 5 GHz is as low as 24 dB and 29 dB, respectively. Then, a metal-semiconductor (MS) diode is tested as a zero-bias millimeter-wave power detector and reaches an outstanding linear-in-dB dynamic range over 40 dB, while having voltage responsivities as high as 257 V ⋅ W−1 at 1 GHz (up to 1 V detected output voltage) and 47 V ⋅ W−1 at 2.5 GHz (up to 0.26 V detected output voltage). These results show superior performance compared to other 2D material-based devices in a much more mature technological phase. Thus, the authors believe that this work demonstrates the potential of 2D-Te as a promising material for devices in emerging high-frequency electronics.es_ES
dc.description.sponsorshipMCIN/AEI/10.13039/501100011033es_ES
dc.description.sponsorshipEuropean Union NextGenerationEU/PRTRes_ES
dc.description.sponsorshipGerman Research Foundation (DFG) under the projects GLECS2 (No. 653408)es_ES
dc.description.sponsorshipMOSTFLEX (653414),es_ES
dc.description.sponsorshipThe Natural Sciences and Engineering Research Council (NSERC) (RGPIN-2017-05810 and ALLRP 577611-22)es_ES
dc.description.sponsorshipThe European Commission under the Horizon 2020 projects Graphene Flagship (No. 785219 and 881603)es_ES
dc.description.sponsorshipPAIDI 2020 and European Social Fund Operational Programme 2014-2020 no. 20804es_ES
dc.description.sponsorshipMinisterio de Universidadeses_ES
dc.description.sponsorshipGrant no. CAS21/ 00483es_ES
dc.description.sponsorshipCanada Foundation for Innovation (CFI)es_ES
dc.description.sponsorshipBritish Columbia Knowledge Development Fund (BCKDF)es_ES
dc.description.sponsorshipWestern Economic Diversification Canada (WD)es_ES
dc.description.sponsorshipSimon Fraser Universityes_ES
dc.language.isoenges_ES
dc.rightsAtribución 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/*
dc.titleTwo-dimensional tellurium-based diodes for RF applicationses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/H2020/785219 881603es_ES
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/ESF/20804es_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.identifier.doi10.1038/s41699-023-00433-w
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones_ES


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Atribución 4.0 Internacional
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