Two-dimensional tellurium-based diodes for RF applications
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Askar, A.M., Palacios, P., Pasadas, F. et al. Two-dimensional tellurium-based diodes for RF applications. npj 2D Mater Appl 7, 70 (2023). [https://doi.org/10.1038/s41699-023-00433-w]
SponsorshipMCIN/AEI/10.13039/501100011033; European Union NextGenerationEU/PRTR; German Research Foundation (DFG) under the projects GLECS2 (No. 653408); MOSTFLEX (653414),; The Natural Sciences and Engineering Research Council (NSERC) (RGPIN-2017-05810 and ALLRP 577611-22); The European Commission under the Horizon 2020 projects Graphene Flagship (No. 785219 and 881603); PAIDI 2020 and European Social Fund Operational Programme 2014-2020 no. 20804; Ministerio de Universidades; Grant no. CAS21/ 00483; Canada Foundation for Innovation (CFI); British Columbia Knowledge Development Fund (BCKDF); Western Economic Diversification Canada (WD); Simon Fraser University
The research of two-dimensional (2D) Tellurium (Te) or tellurene is thriving to address current challenges in emerging thin-film electronic and optoelectronic devices. However, the study of 2D-Te-based devices for high-frequency applications is still lacking in the literature. This work presents a comprehensive study of two types of radio frequency (RF) diodes based on 2D-Te flakes and exploits their distinct properties in two RF applications. First, a metal-insulator-semiconductor (MIS) structure is employed as a nonlinear device in a passive RF mixer, where the achieved conversion loss at 2.5 GHz and 5 GHz is as low as 24 dB and 29 dB, respectively. Then, a metal-semiconductor (MS) diode is tested as a zero-bias millimeter-wave power detector and reaches an outstanding linear-in-dB dynamic range over 40 dB, while having voltage responsivities as high as 257 V ⋅ W−1 at 1 GHz (up to 1 V detected output voltage) and 47 V ⋅ W−1 at 2.5 GHz (up to 0.26 V detected output voltage). These results show superior performance compared to other 2D material-based devices in a much more mature technological phase. Thus, the authors believe that this work demonstrates the potential of 2D-Te as a promising material for devices in emerging high-frequency electronics.