A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices

Abstract

Variability is an inherent property of memristive devices based on the switching of resistance in a simple metal–oxide–metal structure compatible with the standard complementary metal–oxide–semiconductor fabrication process. For each specific structure, the variability should be measured and assessed as both the negative and positive factors for different applications of memristive devices. In this report, it is shown how this variability can be extracted and analyzed for such main parameters of resistive switching as the set and reset voltages/currents and how it depends on the methodology used and experimental conditions. The obtained results should be taken into account in the design and predictive simulation of memristive devices and circuits.