A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices
Metadatos
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Wiley
Materia
Memristors Resistive switching Resistive random access memory Tantalum oxide Variabilities Yttria-stabilized zirconia
Fecha
2022-09-30Referencia bibliográfica
Maldonado, D... [et al.] (2022), A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices. Phys. Status Solidi A 2200520. [https://doi.org/10.1002/pssa.202200520]
Patrocinador
Junta de Andalucia; European Commission A-TIC-117-UGR18 B-TIC-624-UGR20 IE2017-5414; Government of the Russian Federation 074-02-2018-330 (2); Ministry of Science and Higher Education of the Russian Federation N-466-99_2021-2023Resumen
Variability is an inherent property of memristive devices based on the switching
of resistance in a simple metal–oxide–metal structure compatible with the
standard complementary metal–oxide–semiconductor fabrication process. For
each specific structure, the variability should be measured and assessed as both
the negative and positive factors for different applications of memristive devices.
In this report, it is shown how this variability can be extracted and analyzed for
such main parameters of resistive switching as the set and reset voltages/currents
and how it depends on the methodology used and experimental conditions.
The obtained results should be taken into account in the design and predictive
simulation of memristive devices and circuits.