Mostrar el registro sencillo del ítem
A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices
dc.contributor.author | Maldonado Correa, David | |
dc.contributor.author | Belov, Alexey I. | |
dc.contributor.author | Koryazhkina, Maria N. | |
dc.contributor.author | Jiménez Molinos, Francisco | |
dc.contributor.author | Mikhaylov, Alexey N. | |
dc.contributor.author | Roldán Aranda, Juan Bautista | |
dc.date.accessioned | 2022-11-04T08:49:20Z | |
dc.date.available | 2022-11-04T08:49:20Z | |
dc.date.issued | 2022-11 | |
dc.identifier.citation | Maldonado Correa, David. et. al. A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices. Phys. Status Solidi A 2022, 2200520 [DOI: 10.1002/pssa.202200520] | es_ES |
dc.identifier.uri | https://hdl.handle.net/10481/77741 | |
dc.description | The authors acknowledge the Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain), European Regional Development Fund (ERDF) under projects A-TIC-117-UGR18, B-TIC-624-UGR20, and IE2017-5414. Support from the Government of the Russian Federation under Megagrant Program (agreement no. 074-02-2018-330 (2)) and the Ministry of Science and Higher Education of the Russian Federation under “Priority-2030” Academic Excellence Program of the Lobachevsky State University of Nizhny Novgorod (N-466-99_2021- 2023) is also acknowledged. Memristive devices were designed in the frame of the scientific program of the National Center for Physics and Mathematics (project “Artificial intelligence and big data in technical, industrial, natural and social systems”). | es_ES |
dc.description.abstract | Variability is an inherent property of memristive devices based on the switching of resistance in a simple metal–oxide–metal structure compatible with the standard complementary metal–oxide–semiconductor fabrication process. For each specific structure, the variability should be measured and assessed as both the negative and positive factors for different applications of memristive devices. In this report, it is shown how this variability can be extracted and analyzed for such main parameters of resistive switching as the set and reset voltages/cur- rents and how it depends on the methodology used and experimental conditions. The obtained results should be taken into account in the design and predictive simulation of memristive devices and circuits. | es_ES |
dc.description.sponsorship | Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain), European Regional Development Fund (ERDF) under projects A-TIC-117-UGR18, B-TIC-624-UGR20, and IE2017-5414 | es_ES |
dc.description.sponsorship | Government of the Russian Federation under Megagrant Program (agreement no. 074-02-2018-330 (2)) | es_ES |
dc.description.sponsorship | Ministry of Science and Higher Education of the Russian Federation under “Priority-2030” Academic Excellence Program of the Lobachevsky State University of Nizhny Novgorod (N-466-99_2021- 2023) | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | Wiley-VCH GmbH | es_ES |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | Memristors | |
dc.subject | Resistive switching | |
dc.subject | Resistive random access memory | |
dc.subject | Tantalum oxide | |
dc.subject | Variabilities | |
dc.subject | Yttria-stabilized zirconia | |
dc.title | A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices | es_ES |
dc.type | journal article | es_ES |
dc.rights.accessRights | open access | es_ES |
dc.identifier.doi | 10.1002/pssa.202200520 | |
dc.type.hasVersion | VoR | es_ES |