A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices
Metadata
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Maldonado Correa, David; Belov, Alexey I.; Koryazhkina, Maria N.; Jiménez Molinos, Francisco; Mikhaylov, Alexey N.; Roldán Aranda, Juan BautistaEditorial
Wiley-VCH GmbH
Materia
Memristors Resistive switching Resistive random access memory Tantalum oxide Variabilities Yttria-stabilized zirconia
Date
2022-11Referencia bibliográfica
Maldonado Correa, David. et. al. A Statistical Study of Resistive Switching Parameters in Au/Ta/ZrO2(Y)/Ta2O5/TiN/Ti Memristive Devices. Phys. Status Solidi A 2022, 2200520 [DOI: 10.1002/pssa.202200520]
Sponsorship
Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain), European Regional Development Fund (ERDF) under projects A-TIC-117-UGR18, B-TIC-624-UGR20, and IE2017-5414; Government of the Russian Federation under Megagrant Program (agreement no. 074-02-2018-330 (2)); Ministry of Science and Higher Education of the Russian Federation under “Priority-2030” Academic Excellence Program of the Lobachevsky State University of Nizhny Novgorod (N-466-99_2021- 2023)Abstract
Variability is an inherent property of memristive devices based on the switching
of resistance in a simple metal–oxide–metal structure compatible with the
standard complementary metal–oxide–semiconductor fabrication process. For
each specific structure, the variability should be measured and assessed as both
the negative and positive factors for different applications of memristive devices.
In this report, it is shown how this variability can be extracted and analyzed for
such main parameters of resistive switching as the set and reset voltages/cur-
rents and how it depends on the methodology used and experimental conditions.
The obtained results should be taken into account in the design and predictive
simulation of memristive devices and circuits.