Modeling the variability of Au/ Ti/h BN/Au memris t ive devices
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AuthorRoldán Aranda, Juan Bautista; Maldonado Correa, David; Aguilera Pedregosa, Cristina; Alonso Morales, Francisco J.
Two-Dimensional MaterialsHexagonal boron nitrideMemristorResistive switchingModeling
SponsorshipMinistry of Science and Technology of China (2019YFE0124200, 2018YFE0100800); National Natural Science Foundation of China (61874075); Consejería de Conocimiento, Investigación y Universidad, Junta de Andalucía (Spain) and European Regional Development Fund (ERDF) under projects A-TIC-117-UGR18, A-FQM-66-UGR20, A-FQM-345- UGR18, B-TIC-624-UGR20 and IE2017-5414; Grant PGC2018-098860-B-I00 supported by MCIU/AEI/FEDER; Maria de Maeztu” Excellence Unit IMAG, reference CEX2020-001105-M, funded by MCIN/AEI/10.13039/501100011033; King Abdullah University of Science and Technology
The variability of memristive devices using multilayer hexagonal boron nitride (h-BN) coupled with Ti and Au electrodes (i.e., Au/Ti/h-BN/Au) is analyzed in depth using different numerical techniques. We extract the reset voltage using three different methods, quantified its cycle-to-cycle variability, calculated the charge and flux that allows to minimize the effects of electric noise and the inherent stochasticity of resistive switching, described the device variability using time series analyses to assess the “memory” effect, and employed a circuit breaker simulator to understand the formation and rupture of the percolation paths that produce the switching. We conclude that the cycle-to-cycle variability of the Au/Ti/h-BN/Au devices presented here is higher than that previously observed in Au/h-BN/Au devices, and hence they may be useful for data encryption.