@misc{10481/76502,
year = {2022},
url = {http://hdl.handle.net/10481/76502},
abstract = {The variability of memristive devices using
multilayer hexagonal boron nitride (h-BN) coupled with Ti
and Au electrodes (i.e., Au/Ti/h-BN/Au) is analyzed in
depth using different numerical techniques. We extract the
reset voltage using three different methods, quantified its
cycle-to-cycle variability, calculated the charge and flux
that allows to minimize the effects of electric noise and the
inherent stochasticity of resistive switching, described the
device variability using time series analyses to assess the
“memory” effect, and employed a circuit breaker simulator
to understand the formation and rupture of the percolation
paths that produce the switching. We conclude that the
cycle-to-cycle variability of the Au/Ti/h-BN/Au devices
presented here is higher than that previously observed in
Au/h-BN/Au devices, and hence they may be useful for
data encryption.},
organization = {Ministry of Science and
Technology of China (2019YFE0124200, 2018YFE0100800)},
organization = {National Natural Science Foundation of China (61874075)},
organization = {Consejería de Conocimiento, Investigación y Universidad, Junta de
Andalucía (Spain) and European Regional Development Fund (ERDF)
under projects A-TIC-117-UGR18, A-FQM-66-UGR20, A-FQM-345-
UGR18, B-TIC-624-UGR20 and IE2017-5414},
organization = {Grant PGC2018-098860-B-I00 supported by MCIU/AEI/FEDER},
organization = {Maria de Maeztu” Excellence Unit IMAG, reference CEX2020-001105-M, funded
by MCIN/AEI/10.13039/501100011033},
organization = {King Abdullah University of Science and Technology},
keywords = {Two-Dimensional Materials},
keywords = {Hexagonal boron nitride},
keywords = {Memristor},
keywords = {Resistive switching},
keywords = {Modeling},
title = {Modeling the variability of Au/ Ti/h BN/Au memris t ive devices},
author = {Roldán Aranda, Juan Bautista and Maldonado Correa, David and Aguilera Pedregosa, Cristina and Alonso Morales, Francisco J.},
}