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Recharging process of commercial floating-gate MOS transistor in dosimetry application

dc.contributor.authorIlic, Stefan D.
dc.contributor.authorPalma López, Alberto José 
dc.date.accessioned2022-01-25T12:00:16Z
dc.date.available2022-01-25T12:00:16Z
dc.date.issued2021-10-11
dc.identifier.citationStefan D. Ilić... [et al.]. Recharging process of commercial floating-gate MOS transistor in dosimetry application, Microelectronics Reliability, Volume 126, 2021, 114322, ISSN 0026-2714, [https://doi.org/10.1016/j.microrel.2021.114322]es_ES
dc.identifier.urihttp://hdl.handle.net/10481/72475
dc.descriptionThis research was funded by Ministry of Education, Science and Technological Development of the Republic of Serbia, under the project No.43011, grant No.451-03-9/2021-14/200026 and European Com-mission, WIDESPREAD-2018-3-TWINNING, grant No.857558-ELICSIR.es_ES
dc.description.abstractWe investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.es_ES
dc.description.sponsorshipMinistry of Education, Science & Technological Development, Serbia 43011 451-03-9/2021-14/200026es_ES
dc.description.sponsorshipEuropean Commission 857558-ELICSIRes_ES
dc.language.isoenges_ES
dc.publisherElsevieres_ES
dc.rightsAtribución 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/es/*
dc.subjectFloating gatees_ES
dc.subjectRadiation sensores_ES
dc.subjectEPADes_ES
dc.subjectRecharginges_ES
dc.subjectProgramming celles_ES
dc.subjectNon-volatile memoryes_ES
dc.titleRecharging process of commercial floating-gate MOS transistor in dosimetry applicationes_ES
dc.typejournal articlees_ES
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/H2020/857558es_ES
dc.rights.accessRightsopen accesses_ES
dc.identifier.doi10.1016/j.microrel.2021.114322
dc.type.hasVersionVoRes_ES


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