Recharging process of commercial floating-gate MOS transistor in dosimetry application

Ilic, Stefan D.; Palma López, Alberto José

doi:10.1016/j.microrel.2021.114322

1-s2.0-S0026271421002882-main.pdf (989.2Kb)

Identificadores

URI: http://hdl.handle.net/10481/72475

DOI: 10.1016/j.microrel.2021.114322

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Editorial

Elsevier

Materia

Floating gate

Radiation sensor

EPAD

Recharging

Programming cell

Non-volatile memory

Date

2021-10-11

Referencia bibliográfica

Stefan D. Ilić... [et al.]. Recharging process of commercial floating-gate MOS transistor in dosimetry application, Microelectronics Reliability, Volume 126, 2021, 114322, ISSN 0026-2714, [https://doi.org/10.1016/j.microrel.2021.114322]

Sponsorship

Ministry of Education, Science & Technological Development, Serbia 43011 451-03-9/2021-14/200026; European Commission 857558-ELICSIR

Abstract

We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.

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Except where otherwise noted, this item's license is described as Atribución 3.0 España