Phase-type distributions for studying variability in resistve memories
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AuthorAcal González, Christian José; Ruiz-Castro, Juan Eloy; Aguilera Del Pino, Ana María; Jimenez- Molinos, Francisco; Roldán Aranda, Juan Bautista
Resistive switching memoryConductive filamentsReset processWeibull distributionPhase-type distributionsStatistical modeling
Phase-type distributions for studying variability in resistive memories. Journal of Computational and Applied Mathematics , 345, 23-32. DOI: 10.1016/j.cam.2018.06.010
SponsorshipSpanish Ministry of Economy and Competitiveness (FEDER program) TEC2017-84321-C4-3-R MTM2017-88708-P; IMB-CNM (CSIC) (Barcelona)
A new statistical approach has been developed to analyze Resistive Random Access Memory (RRAM) variability. The stochastic nature of the physical processes behind the operation of resistive memories makes variability one of the key issues to solve from the industrial viewpoint of these new devices. The statistical features of variability have been usually studied making use of Weibull distribution. However, this probability distribution does not work correctly for some resistive memories, in particular for those based on the Ni/HfO2/Si structure thar has been employed in this work. A completely new approach based on phase-type modelling is proposed in this paper to characterize the randomness of resistive memories operation. An in-depth comparision with experimental results shows that the fitted phase-type distribution works better than the Weibull distribution and also helps to understand the physics of the resistive memories.