Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator
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AuthorMedina Bailón, Cristina; Padilla de la Torre, José Luis; Sampedro Matarín, Carlos; Donetti, Luca; Gámiz Pérez, Francisco Jesús
Direct source-to-drain tunnelingTunneling probabilityLandauer formalismMultisubband ensemble Monte CarloNon-equilibrium Green’s functionDGSOIFinFET
Medina-Bailon, C.; Padilla, J.L.; Sampedro, C.; Donetti, L.; Gergiev, V.P.; Gamiz, F.; Asenov, A. Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator. Micromachines 2021, 12, 601. https:// doi.org/10.3390/mi12060601
SponsorshipSpanish Ministry of Economy, Industry and Competitivity under grant TEC2017-89800-R; EPSRC UKRI Innovation Fellowship scheme under grant agreement No. EP/S001131/1 (QSEE); Juan de la Cierva Incorporación Fellowship scheme under grant agreement No. IJC2019-040003-I (MICINN/AEI)
The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC has traditionally led to overestimated current levels in the subthreshold regime. In order to correct this issue and enhance the capabilities of this type of simulator, we discuss in this paper two alternative and self-consistent solutions focusing on different parts of the simulation flow. The first solution reformulates the tunneling probability computation by modulating the WKB approximation in a suitable way. The second corresponds to a change in the current calculation technique based on the utilization of the Landauer formalism. The results from both solutions are compared and contrasted to NEGF results from NESS. We conclude that the current computation modification constitutes the most suitable and advisable strategy to improve the MS-EMC tool.