@misc{10481/68747,
year = {2021},
url = {http://hdl.handle.net/10481/68747},
abstract = {The implementation of a source to drain tunneling in ultrascaled devices using MS-EMC
has traditionally led to overestimated current levels in the subthreshold regime. In order to correct this
issue and enhance the capabilities of this type of simulator, we discuss in this paper two alternative
and self-consistent solutions focusing on different parts of the simulation flow. The first solution
reformulates the tunneling probability computation by modulating the WKB approximation in a
suitable way. The second corresponds to a change in the current calculation technique based on the
utilization of the Landauer formalism. The results from both solutions are compared and contrasted
to NEGF results from NESS. We conclude that the current computation modification constitutes the
most suitable and advisable strategy to improve the MS-EMC tool.},
organization = {Spanish Ministry of Economy, Industry and Competitivity
under grant TEC2017-89800-R},
organization = {EPSRC UKRI Innovation Fellowship scheme under grant agreement
No. EP/S001131/1 (QSEE)},
organization = {Juan de la Cierva Incorporación Fellowship scheme under grant
agreement No. IJC2019-040003-I (MICINN/AEI)},
publisher = {MDPI},
keywords = {Direct source-to-drain tunneling},
keywords = {Tunneling probability},
keywords = {Landauer formalism},
keywords = {Multisubband ensemble Monte Carlo},
keywords = {Non-equilibrium Green’s function},
keywords = {DGSOI},
keywords = {FinFET},
title = {Self-Consistent Enhanced S/D Tunneling Implementation in a 2D MS-EMC Nanodevice Simulator},
doi = {10.3390/mi12060601},
author = {Medina Bailón, Cristina and Padilla De la Torre, José Luis and Sampedro Matarín, Carlos and Donetti, Luca and Gámiz Pérez, Francisco Jesús},
}