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dc.contributor.authorToral López, Alejandro 
dc.contributor.authorGonzález Marín, Enrique 
dc.contributor.authorMedina Rull, Alberto 
dc.contributor.authorGarcía Ruiz, Francisco Javier 
dc.contributor.authorGodoy Medina, Andrés 
dc.date.accessioned2021-05-26T07:37:01Z
dc.date.available2021-05-26T07:37:01Z
dc.date.issued2021-03-12
dc.identifier.citationNanoscale Adv., 2021, 3, 2377. [https://doi.org/10.1039/d0na00953a]es_ES
dc.identifier.urihttp://hdl.handle.net/10481/68729
dc.descriptionA. Toral-Lopez acknowledges the FPU program (FPU16/04043). E. G. Marin acknowledges Juan de la Cierva Incorporación IJCI-2017-32297 (MINECO/AEI). This work has received funding from the European Unions Horizon 2020 Research and Innovation Programme under grant agreements No. GrapheneCore2 785219 and No. GrapheneCore3 881603, and from Ministerio de Ciencia, Innovación y Universidades under grant agreement RTI2018-097876-B-C21 (MCIU/AEI/FEDER, UE), TEC2017- 89955-P (MINECO/AEI/FEDER, UE), and TEC2015-67462-C2-1- R (MINECO). This article has been partially funded by the European Regional Development Funds (ERDF) allocated to the Programa Operatiu FEDER de Catalunya 2014–2020, with support of the Secretaria d’Universitats i Recerca of the Departament d’Empresa i Coneixement of the Generalitat de Catalunya for Emerging Technology Clusters to carry out valorization and transfer of research results. GraphCAT project 001-P-001702.es_ES
dc.description.abstractTwo-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support the experimental activities and to provide them with useful guidelines becomes essential. In this context, we propose a theoretical approach that combines numerical simulations and small-signal modeling to analyze 2DM-based FETs for radio-frequency applications. This multi-scale scheme takes into account non-idealities, such as interface traps, carrier velocity saturation, or short channel effects, by means of self-consistent physics-based numerical calculations that later feed the circuit level via a small-signal model based on the dynamic intrinsic capacitances of the device. At the circuit stage, the possibilities range from the evaluation of the performance of a single device to the design of complex circuits combining multiple transistors. In this work, we validate our scheme against experimental results and exemplify its use and capability assessing the impact of the channel scaling on the performance of MoS2-based FETs targeting RF applications.es_ES
dc.description.sponsorshipFPU program (FPU16/04043)es_ES
dc.description.sponsorshipJuan de la Cierva Incorporación IJCI-2017-32297 (MINECO/AEI)es_ES
dc.description.sponsorshipEuropean Unions Horizon 2020 Research and Innovation Programme under grant agreements No. GrapheneCore2 785219 and No. GrapheneCore3 881603es_ES
dc.description.sponsorshipMinisterio de Ciencia, Innovación y Universidades under grant agreement RTI2018-097876-B-C21 (MCIU/AEI/FEDER, UE), TEC2017- 89955-P (MINECO/AEI/FEDER, UE), and TEC2015-67462-C2-1- R (MINECO)es_ES
dc.description.sponsorshipEuropean Regional Development Funds (ERDF) allocated to the Programa Operatiu FEDER de Catalunya 2014–2020, with support of the Secretaria d’Universitats i Recerca of the Departament d’Empresa i Coneixement of the Generalitat de Catalunya for Emerging Technology Clusterses_ES
dc.description.sponsorshipGraphCAT project 001-P-001702es_ES
dc.language.isoenges_ES
dc.publisherRoyal Society of Chemistryes_ES
dc.rightsAtribución-NoComercial 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc/3.0/es/*
dc.titleMulti-scale analysis of radio-frequency performance of 2D-material based field-effect transistorses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/H2020/785219es_ES
dc.relation.projectIDinfo:eu-repo/grantAgreement/EC/H2020/881603es_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.identifier.doi10.1039/d0na00953a
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones_ES


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Atribución-NoComercial 3.0 España
Except where otherwise noted, this item's license is described as Atribución-NoComercial 3.0 España