Multi-scale analysis of radio-frequency performance of 2D-material based field-effect transistors
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AuthorToral López, Alejandro; González Marín, Enrique; Medina Rull, Alberto; García Ruiz, Francisco Javier; Godoy Medina, Andrés
Royal Society of Chemistry
Nanoscale Adv., 2021, 3, 2377. [https://doi.org/10.1039/d0na00953a]
SponsorshipFPU program (FPU16/04043); Juan de la Cierva Incorporación IJCI-2017-32297 (MINECO/AEI); European Unions Horizon 2020 Research and Innovation Programme under grant agreements No. GrapheneCore2 785219 and No. GrapheneCore3 881603; Ministerio de Ciencia, Innovación y Universidades under grant agreement RTI2018-097876-B-C21 (MCIU/AEI/FEDER, UE), TEC2017- 89955-P (MINECO/AEI/FEDER, UE), and TEC2015-67462-C2-1- R (MINECO); European Regional Development Funds (ERDF) allocated to the Programa Operatiu FEDER de Catalunya 2014–2020, with support of the Secretaria d’Universitats i Recerca of the Departament d’Empresa i Coneixement of the Generalitat de Catalunya for Emerging Technology Clusters; GraphCAT project 001-P-001702
Two-dimensional materials (2DMs) are a promising alternative to complement and upgrade high-frequency electronics. However, in order to boost their adoption, the availability of numerical tools and physically-based models able to support the experimental activities and to provide them with useful guidelines becomes essential. In this context, we propose a theoretical approach that combines numerical simulations and small-signal modeling to analyze 2DM-based FETs for radio-frequency applications. This multi-scale scheme takes into account non-idealities, such as interface traps, carrier velocity saturation, or short channel effects, by means of self-consistent physics-based numerical calculations that later feed the circuit level via a small-signal model based on the dynamic intrinsic capacitances of the device. At the circuit stage, the possibilities range from the evaluation of the performance of a single device to the design of complex circuits combining multiple transistors. In this work, we validate our scheme against experimental results and exemplify its use and capability assessing the impact of the channel scaling on the performance of MoS2-based FETs targeting RF applications.