Non-Linear Capacitance of Si SJ MOSFETs in Resonant Zero Voltage Switching Applications
Metadatos
Mostrar el registro completo del ítemAutor
Escudero, Manuel; Kutschak, Matteo Alessandro; Fontana, Nico; Rodríguez Santiago, Noel; Morales Santos, Diego PedroEditorial
IEEE Inst Electrical Electronics Engineers Inc
Materia
Hard-switching Non-linear capacitance Resonant converter Wide band gap Zero voltage switching
Fecha
2020-07-02Referencia bibliográfica
Escudero, M., Kutschak, M. A., Fontana, N., Rodriguez, N., & Morales, D. P. (2020). Non-Linear Capacitance of Si SJ MOSFETs in Resonant Zero Voltage Switching Applications. IEEE Access, 8, 116117-116131. [DOI: 10.1109/ACCESS.2020.3004440]
Resumen
The parasitic capacitances of modern Si SJ MOSFETs are characterized by their non-linearity.
At high voltages the total stored energy Eoss(VDC) in the output capacitance Coss(v) differs substantially
from the energy in an equivalent linear capacitor Coss(tr) storing the same amount of charge. That difference
requires the de nition of an additional equivalent linear capacitor Coss(er) storing the same amount of energy
at a speci c voltage. However, the parasitic capacitances of current SiC and GaN devices have a more
linear distribution of charge along the voltage. Moreover, the equivalent Coss(tr) and Coss(er) of SiC and GaN
devices are smaller than the ones of a Si device with a similar Rds;on. In this work, the impact of the nonlinear
distribution of charge in the performance and the design of resonant ZVS converters is analyzed.
A Si SJ device is compared to a SiC device of equivalent Coss(tr), and to a GaN device of equivalent Coss(er),
in single device topologies and half-bridge based topologies, in full ZVS and in partial or full hard-switching.
A prototype of 3300 W resonant LLC DCDC converter, with nominal 400 V input to 52 V output, was
designed and built to demonstrate the validity of the analysis.