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dc.contributor.authorDonetti, Luca 
dc.contributor.authorSampedro Matarín, Carlos 
dc.contributor.authorGarcía Ruiz, Francisco Javier 
dc.contributor.authorGodoy Medina, Andrés 
dc.contributor.authorGámiz Pérez, Francisco Jesús
dc.identifier.citationL. Donetti, C. Sampedro, F.G. Ruiz, A. Godoy, F. Gamiz. A thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulations. Solid State Electronics 159 (2019) 19–25 [Preprint] []es_ES
dc.description.abstractWe thoroughly compare the DC electrical behavior of n-MOS transistors based on Si nanowires with 〈 1 0 0 〉 and 〈 1 1 0 〉 channel orientations by means of Multi-Subband Ensemble Monte Carlo simulations. We find that the drain current depends on the nanowire diameter and it is slightly, but consistently, larger for 〈 1 0 0 〉 than for 〈 1 1 0 〉 nanowires. The observed differences in mobility, velocity and spatial charge distribution are interpreted in terms of the effective masses and populations of the different Si conduction band valleys, whose sixfold degeneracy is lifted by quantum confinement in narrow nanowires. Finally, we study the scaling behavior for channel lengths down to 8 nm, concluding that the differences observed between orientations are minimal.es_ES
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.subjectGate-all-around MOSFETes_ES
dc.subjectMonte Carlo simulationes_ES
dc.subjectShort-channel effectses_ES
dc.subjectNanowire orientationes_ES
dc.titleA thorough study of Si nanowire FETs with 3D Multi-Subband Ensemble Monte Carlo simulationses_ES

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Atribución-NoComercial-SinDerivadas 3.0 España
Except where otherwise noted, this item's license is described as Atribución-NoComercial-SinDerivadas 3.0 España