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dc.contributor.authorMedina-Bailon, Cristina
dc.contributor.authorSampedro Matarín, Carlos 
dc.contributor.authorGámiz Pérez, Francisco Jesús 
dc.contributor.authorGodoy Medina, Andrés 
dc.contributor.authorDonetti, Luca 
dc.date.accessioned2019-07-24T09:42:16Z
dc.date.available2019-07-24T09:42:16Z
dc.date.issued2017-02
dc.identifier.citationC. Medina-Bailon, C. Sampedro, F. Gámiz, A. Godoy, and L. Donetti. Confinement orientation effects in S/D tunneling. Solid-State Electronics, Volume 128, February 2017, Pages 48-53 [doi:10.1016/j.sse.2016.10.028]es_ES
dc.identifier.urihttp://hdl.handle.net/10481/56514
dc.description.abstractThe most extensive research of scaled electronic devices involves the inclusion of quantum effects in the transport direction as transistor dimensions approach nanometer scales. Moreover, it is necessary to study how these mechanisms affect different transistor architectures to determine which one can be the best candidate to implement future nodes. This work implements Source-to-Drain Tunneling mechanism (S/D tunneling) in a Multi-Subband Ensemble Monte Carlo (MS-EMC) simulator showing the modification in the distribution of the electrons in the subbands, and, consequently, in the potential profile due to different confinement direction between DGSOIs and FinFETs.es_ES
dc.description.sponsorshipSpanish Ministry of Science and Innovation (TEC2014-59730-R), H2020 - REMINDER (687931), and H2020 - WAYTOGO-FAST (662175)es_ES
dc.language.isoenges_ES
dc.publisherElsevieres_ES
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.titleConfinement orientation effects in S/D tunnelinges_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.identifier.doi10.1016/j.sse.2016.10.028


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Atribución-NoComercial-SinDerivadas 3.0 España
Except where otherwise noted, this item's license is described as Atribución-NoComercial-SinDerivadas 3.0 España