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dc.contributor.authorDonetti, Luca 
dc.contributor.authorSampedro Matarín, Carlos 
dc.contributor.authorGarcía Ruiz, Francisco Javier 
dc.contributor.authorGodoy Medina, Andrés 
dc.contributor.authorGámiz Pérez, Francisco Jesús
dc.identifier.citationDonetti, L. [et al.] Multi-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETs. Solid State Electronics 143 (2018) 49–5 [Preprint] [doi:10.1016/j.sse.2018.02.004]es_ES
dc.description.abstractWe developed a Multi-Subband Ensemble Monte Carlo simulator for non-planar devices, taking into account two-dimensional quantum confinement. It couples self-consistently the solution of the 3D Poisson equation, the 2D Schrödinger equation, and the 1D Boltzmann transport equation with the Ensemble Monte Carlo method. This simulator was employed to study MOS devices based on ultra-scaled Gate-All-Around Si nanowires with diameters in the range from 4 nm to 8 nm with gate length from 8 nm to 14 nm. We studied the output and transfer characteristics, interpreting the behavior in the sub-threshold region and in the ON state in terms of the spatial charge distribution and the mobility computed with the same simulator. We analyzed the results, highlighting the contribution of different valleys and subbands and the effect of the gate bias on the energy and velocity profiles. Finally the scaling behavior was studied, showing that only the devices with D = 4 nm maintain a good control of the short channel effects down to the gate length of 8 nm .es_ES
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.subjectGate-all-around MOSFETes_ES
dc.subjectMonte Carlo simulationes_ES
dc.subjectShort-channel effectses_ES
dc.titleMulti-Subband Ensemble Monte Carlo simulations of scaled GAA MOSFETses_ES

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Atribución-NoComercial-SinDerivadas 3.0 España
Except where otherwise noted, this item's license is described as Atribución-NoComercial-SinDerivadas 3.0 España