• Geometrical variability impact on the gate tunneling leakage mechanisms in FinFETs 

  Medina Bailón, Cristina; Padilla De la Torre, José Luis; Donetti, Luca; Navarro Moral, Carlos; Sampedro Matarín, Carlos; [et al.] (2025-12)

• Assessment of Pseudo–Bilayer Structures in the Heterogate Germanium Electron–Hole Bilayer Tunnel Field–Effect Transistor 

  Padilla De la Torre, José Luis; Alper, C; Medina Bailón, Cristina; Gámiz Pérez, Francisco Jesús; Ionescu, Adrian Mihai (2015-06-30)

• Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron–Hole Bilayer Tunneling Field–Effect Transistor 

  Padilla De la Torre, José Luis; Medina Bailón, Cristina; Márquez González, Carlos; Sampedro Matarín, Carlos; Donetti, Luca; [et al.] (2018-08-29)

• Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities 

  Padilla De la Torre, José Luis; Medina Bailón, Cristina; Navarro Moral, Carlos; Alper, C; Gámiz Pérez, Francisco Jesús; [et al.] (2017-12-06)

• Performance of FDSOI double-gate dual-doped reconfigurable FETs 

  Navarro Moral, Carlos; Donetti, Luca; Padilla De la Torre, José Luis; Medina Bailón, Cristina; Ávila Gómez, Jorge Pablo; [et al.] (2022-04-21)

Más