Study and Simulation of Advanced Si–based Nanodevices: Schottky–Barrier MOSFETs and Tunnel FETs

Abstract

The aim of the work herein presented in this thesis is to deepen the simulation study of devices based of new injection mechanisms, which are currently regarded as potentially interesting to replace conventional MOSFETs and overcome their fundamental subthreshold swing limitation of 60mV/dec. The physical impossibility of breaking this limit fosters most of the ongoing research precisely in the direction of exploring novel devices such as those considered in this work: the Tunneling Field–Effect Transistors (TFETs) and the Schottky Barrier MOSFETs (SB–MOSFETs).