Study and Simulation of Advanced Si–based Nanodevices: Schottky–Barrier MOSFETs and Tunnel FETs
Metadatos
Mostrar el registro completo del ítemEditorial
Universidad de Granada
Departamento
Universidad de Granada. Departamento de Electrónica y Tecnología de ComputadoresMateria
Transistores MOSFET Nanoelectrónica Métodos de simulación Tunnel FETs Emisión termoiónica Transductores ATLAS simulator
Materia UDC
621.382.3 621.31 33
Fecha
2016Fecha lectura
2012-10-26Referencia bibliográfica
Padilla, J.L. Study and Simulation of Advanced Si–based Nanodevices: Schottky–Barrier MOSFETs and Tunnel FETs. Granada: Universidad de Granada, 2016. [http://hdl.handle.net/10481/43553]
Patrocinador
Tesis Univ. Granada. Departamento de Electrónica y Tecnología de ComputadoresResumen
The aim of the work herein presented in this thesis is to deepen the
simulation study of devices based of new injection mechanisms, which
are currently regarded as potentially interesting to replace conventional
MOSFETs and overcome their fundamental subthreshold swing limitation
of 60mV/dec. The physical impossibility of breaking this limit
fosters most of the ongoing research precisely in the direction of exploring
novel devices such as those considered in this work: the Tunneling
Field–Effect Transistors (TFETs) and the Schottky Barrier MOSFETs
(SB–MOSFETs).