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Spatial Dependence of the Phonon-Limited Mobility in Arbitrarily Oriented Si-Nanowires

dc.contributor.authorTienda-Luna, Isabel María
dc.contributor.authorGarcía Ruiz, Francisco Javier 
dc.contributor.authorGodoy Medina, Andrés 
dc.contributor.authorGonzález Marín, Enrique 
dc.contributor.authorGámiz Pérez, Francisco Jesús 
dc.date.accessioned2014-09-08T09:18:13Z
dc.date.available2014-09-08T09:18:13Z
dc.date.issued2012-05
dc.identifier.citationTienda-Luna, I.M.; et al. Spatial Dependence of the Phonon-Limited Mobility in Arbitrarily Oriented Si-Nanowires. In: 15th International Workshop on Computational Electronics (IWCE 2012). University of Winsconsin (Madison, USA), may 22-25, 2012. [http://hdl.handle.net/10481/32935]es_ES
dc.identifier.urihttp://hdl.handle.net/10481/32935
dc.description.abstractThe study of the transport properties of Si-Nanowires (NWs) is a research field of high interest. The spatial dependence of the low-field mobility and, in particular, the role of the corners is still not clear. Only recently, Lee et al. have considered their impact on the mobility through the development of a Spatial Dependent Mobility (SDM) expression. In this work, we extend their approach to study the phonon-limited mobility (μph ) of arbitrarily oriented square NWs.es_ES
dc.description.sponsorshipWork supported by the projects P09-TIC-4873, FIS-2008-05805 and FIS-2011-26005. E. González Marín also acknowledges the FPU program.es_ES
dc.language.isoenges_ES
dc.subjectMobilityes_ES
dc.subjectNanowirees_ES
dc.subjectPhonones_ES
dc.subjectSilicon es_ES
dc.titleSpatial Dependence of the Phonon-Limited Mobility in Arbitrarily Oriented Si-Nanowireses_ES
dc.typeinfo:eu-repo/semantics/conferenceObjectes_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES


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