Spatial Dependence of the Phonon-Limited Mobility in Arbitrarily Oriented Si-Nanowires

Identificadores
URI: http://hdl.handle.net/10481/32935
Exportar
RISMendeleyBibtex
Estadísticas
Ver Estadísticas de uso
Metadatos
Mostrar el registro completo del ítem
Autor
Tienda-Luna, Isabel María; García Ruiz, Francisco Javier; Godoy Medina, Andrés; González Marín, Enrique; Gámiz Pérez, Francisco Jesús
Materia
Mobility
 
Nanowire
 
Phonon
 
Silicon
 
Fecha
2012-05
Referencia bibliográfica
Tienda-Luna, I.M.; et al. Spatial Dependence of the Phonon-Limited Mobility in Arbitrarily Oriented Si-Nanowires. In: 15th International Workshop on Computational Electronics (IWCE 2012). University of Winsconsin (Madison, USA), may 22-25, 2012. [http://hdl.handle.net/10481/32935]
Patrocinador
Work supported by the projects P09-TIC-4873, FIS-2008-05805 and FIS-2011-26005. E. González Marín also acknowledges the FPU program.
Resumen
The study of the transport properties of Si-Nanowires (NWs) is a research field of high interest. The spatial dependence of the low-field mobility and, in particular, the role of the corners is still not clear. Only recently, Lee et al. have considered their impact on the mobility through the development of a Spatial Dependent Mobility (SDM) expression. In this work, we extend their approach to study the phonon-limited mobility (μph ) of arbitrarily oriented square NWs.
Colecciones