3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology

Abstract

Through 3D-TCAD simulations this work aims to demonstrate the benefits of Reconfigurable FETs based on dual doping with respect to the Schottky junctions counterparts using the 28 nm FDSOI platform. These devices feature both N and P dopant species at source and drain to allow for electron and hole symmetrical currents instead of using mid-gap metallic regions. Quasi-static results reveals much larger currents thanks to the enhanced carrier injection with analogous capacitances, leading to faster logic circuits in mixed-mode simulations. Dynamic results also show lower energy-delay products making these devices more efficient and appealing to implement reprogrammable logic.