3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology
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Navarro Moral, Carlos; Donetti, Luca; Padilla De la Torre, José Luis; Medina Bailón, Cristina; Galdón Gil, José Carlos; Márquez González, Carlos; Sampedro Matarín, Carlos; Gámiz Pérez, Francisco JesúsMateria
Ambipolar Barrier FDSOI Polarity Reconfigurable Reprogrammable RFET Schottky
Date
2023-02Referencia bibliográfica
C. Navarro et al. 3D-TCAD benchmark of two-gate dual-doped Reconfigurable FETs on FDSOI28 technology. Solid-State Electronics 200 (2023) 108577 [https://doi.org/10.1016/j.sse.2022.108577]
Abstract
Through 3D-TCAD simulations this work aims to demonstrate the benefits of Reconfigurable FETs based on dual doping with respect to the Schottky junctions counterparts using the 28 nm FDSOI platform. These devices feature both N and P dopant species at source and drain to allow for electron and hole symmetrical currents instead of using mid-gap metallic regions. Quasi-static results reveals much larger currents thanks to the enhanced carrier injection with analogous capacitances, leading to faster logic circuits in mixed-mode simulations. Dynamic results also show lower energy-delay products making these devices more efficient and appealing to implement reprogrammable logic.