Universidad de Granada Digibug
 

Repositorio Institucional de la Universidad de Granada >
1.-Investigación >
Departamentos, Grupos de Investigación e Institutos >
Departamento de Electrónica y Tecnología de Computadores >
DETC - Artículos >

Please use this identifier to cite or link to this item: http://hdl.handle.net/10481/37242

Title: Strain effects on effective masses for MoS2 monolayers
Authors: Ortiz, E. R.
Biel, Blanca
Donetti, Luca
Godoy Medina, Andrés
Gámiz Pérez, Francisco
Issue Date: 2015
Abstract: We have studied the effects of both intrinsic and external factors, such as strain, substrate and electric field, over a MoS2 monolayer, via DFT simulations. From these simulations we computed the system's bandstructure and evaluate the bandgap values, extracting the effective masses as well. Our calculations show a transition between direct and indirect gaps when strain is applied, and also that the bandstructure is barely affected by the presence of a substrate or an external electric field with values up to 1 V/Å.
Publisher: IOP Publishing
Keywords: Strain effects
Metal oxide semiconductors
URI: http://hdl.handle.net/10481/37242
ISSN: 1742-6588
Rights : Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License
Citation: Ortiz, E.R.; et al. Strain effects on effective masses for MoS2 monolayers. Euro-TMCS I, 609: 012008 (2015). [http://hdl.handle.net/10481/37242]
Appears in Collections:DETC - Artículos

Files in This Item:

File Description SizeFormat
Ortiz_MoSMonolayers.pdf700.13 kBAdobe PDFView/Open
Recommend this item

This item is licensed under a Creative Commons License
Creative Commons

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! OpenAire compliant DSpace Software Copyright © 2002-2007 MIT and Hewlett-Packard - Feedback

© Universidad de Granada