Strain effects on effective masses for MoS2 monolayers
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Strain effectsMetal oxide semiconductors
Ortiz, E.R.; et al. Strain effects on effective masses for MoS2 monolayers. Euro-TMCS I, 609: 012008 (2015). [http://hdl.handle.net/10481/37242]
We have studied the effects of both intrinsic and external factors, such as strain, substrate and electric field, over a MoS2 monolayer, via DFT simulations. From these simulations we computed the system's bandstructure and evaluate the bandgap values, extracting the effective masses as well. Our calculations show a transition between direct and indirect gaps when strain is applied, and also that the bandstructure is barely affected by the presence of a substrate or an external electric field with values up to 1 V/Å.