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Strain effects on effective masses for MoS2 monolayers
dc.contributor.author | Ortiz, E. R. | |
dc.contributor.author | Biel, Blanca | |
dc.contributor.author | Donetti, Luca | |
dc.contributor.author | Godoy Medina, Andrés | |
dc.contributor.author | Gámiz Pérez, Francisco Jesús | |
dc.date.accessioned | 2015-09-03T11:54:24Z | |
dc.date.available | 2015-09-03T11:54:24Z | |
dc.date.issued | 2015 | |
dc.identifier.citation | Ortiz, E.R.; et al. Strain effects on effective masses for MoS2 monolayers. Euro-TMCS I, 609: 012008 (2015). [http://hdl.handle.net/10481/37242] | es_ES |
dc.identifier.issn | 1742-6588 | |
dc.identifier.uri | http://hdl.handle.net/10481/37242 | |
dc.description.abstract | We have studied the effects of both intrinsic and external factors, such as strain, substrate and electric field, over a MoS2 monolayer, via DFT simulations. From these simulations we computed the system's bandstructure and evaluate the bandgap values, extracting the effective masses as well. Our calculations show a transition between direct and indirect gaps when strain is applied, and also that the bandstructure is barely affected by the presence of a substrate or an external electric field with values up to 1 V/Å. | es_ES |
dc.language.iso | eng | es_ES |
dc.publisher | IOP Publishing | es_ES |
dc.rights | Creative Commons Attribution-NonCommercial-NoDerivs 3.0 License | es_ES |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/ | es_ES |
dc.subject | Strain effects | es_ES |
dc.subject | Metal oxide semiconductors | es_ES |
dc.title | Strain effects on effective masses for MoS2 monolayers | es_ES |
dc.type | info:eu-repo/semantics/article | es_ES |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es_ES |
dc.identifier.doi | 10.1088/1742-6596/609/1/012008 |