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dc.contributor.authorOrtiz, E. R.
dc.contributor.authorBiel, Blanca
dc.contributor.authorDonetti, Luca 
dc.contributor.authorGodoy Medina, Andrés 
dc.contributor.authorGámiz Pérez, Francisco Jesús 
dc.date.accessioned2015-09-03T11:54:24Z
dc.date.available2015-09-03T11:54:24Z
dc.date.issued2015
dc.identifier.citationOrtiz, E.R.; et al. Strain effects on effective masses for MoS2 monolayers. Euro-TMCS I, 609: 012008 (2015). [http://hdl.handle.net/10481/37242]es_ES
dc.identifier.issn1742-6588
dc.identifier.urihttp://hdl.handle.net/10481/37242
dc.description.abstractWe have studied the effects of both intrinsic and external factors, such as strain, substrate and electric field, over a MoS2 monolayer, via DFT simulations. From these simulations we computed the system's bandstructure and evaluate the bandgap values, extracting the effective masses as well. Our calculations show a transition between direct and indirect gaps when strain is applied, and also that the bandstructure is barely affected by the presence of a substrate or an external electric field with values up to 1 V/Å.es_ES
dc.language.isoenges_ES
dc.publisherIOP Publishinges_ES
dc.rightsCreative Commons Attribution-NonCommercial-NoDerivs 3.0 Licensees_ES
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es_ES
dc.subjectStrain effectses_ES
dc.subjectMetal oxide semiconductorses_ES
dc.titleStrain effects on effective masses for MoS2 monolayerses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.identifier.doi10.1088/1742-6596/609/1/012008


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