TY  - GEN 
AU  - Cuesta-López, Juan
AU  - Marín, Enrique G.
AU  - Toral López, Alejandro
AU  - Ganeriwala, Mohit Dineshkumar
AU  - Ruiz, Francisco G.
AU  - Pasadas Cantos, Francisco
AU  - Godoy Medina, Andrés
PY  - 2023
UR  - https://hdl.handle.net/10481/91050
AB  - We simulate voltage-driven ion migration in gate oxides
as a potential mechanism to develop non-volatile
memories (NVMs) as appropriate candidates for
neuromorphic computing applications. Our study aims to
give insights about the impact of ion...
LA  - eng
TI  - Volatile modulation of oxygen vacancy-related dipoles in gate insulators as a mechanism for non-volatile memories
ER  -