TY  - JOUR 
AU  - Ristic, Goran S.
AU  - Palma López, Alberto José
AU  - Lallena Rojo, Antonio Miguel
PY  - 2021
UR  - http://hdl.handle.net/10481/70847
AB  - The RADiation sensitive metal-oxide-semiconductor field-effect-transistors (RADFETs) were irradiated with gamma rays up to absorbed dose of 110 Gy(H2O). The results of threshold voltage, V-T , during irradiation with various positive gate biases...
LA  - eng
PB  - Taylor & Francis Online
KW  - pMOS dosimeters
KW  - RADFETs
KW  - Sensitivity
KW  - Fading
KW  - Radiation  defects
TI  - Radiation sensitive MOSFETs irradiated with various positive gate biases
DO  - 10.1080/16878507.2021.1970921
ER  -