TY  - JOUR 
AU  - Navarro Moral, Santiago
AU  - Márquez González, Carlos
AU  - Lee, Kyunghwa
AU  - Navarro Moral, Carlos
AU  - Parihar, Mukta Singh
AU  - Park, Hyungjin
AU  - Galy, Philippe
AU  - Bawedin, Maryline
AU  - Kim, Yong Tae
AU  - Cristoloveanu, Sorin
AU  - Gámiz Pérez, Francisco Jesús
AU  - Kim
PY  - 2019
UR  - http://hdl.handle.net/10481/57452
AB  - Thin-oxide Z2-FET cells operating as capacitor-less DRAM devices are experimentally demonstrated. Both the retention time and memory window demonstrate the feasibility of implementing this cell in advanced 28 nm node FD SOI technology. Nevertheless a...
LA  - eng
KW  - 1T-DRAM
KW  - Z2-FET
KW  - Capacitorless
KW  - Fully depleted (FD)
TI  - Investigation of thin gate-stack Z2-FET devices as capacitor-less memory cells
DO  - 10.1016/j.sse.2019.03.040
ER  -