Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field-Effect Transistors Pasadas Cantos, Francisco 2D materials Compact modeling Graphene Hybrid integrated circuits Monolithic integrated circuits Radio-frequency Transistors The progress made toward the definition of a modular compact modeling technology for graphene field-effect transistors (GFETs) that enables the electrical analysis of arbitrary GFET-based integrated circuits is reported. A set of primary models embracing the main physical principles defines the ideal GFET response under DC, transient (time domain), AC (frequency domain), and noise (frequency domain) analysis. Another set of secondary models accounts for the GFET non-idealities, such as extrinsic-, short-channel-, trapping/detrapping-, self-heating-, and non-quasi static-effects, which can have a significant impact under static and/or dynamic operation. At both device and circuit levels, significant consistency is demonstrated between the simulation output and experimental data for relevant operating conditions. Additionally, a perspective of the challenges during the scale up of the GFET modeling technology toward higher technology readiness levels while drawing a collaborative scenario among fabrication technology groups, modeling groups, and circuit designers, is provided. 2022-12-01T12:51:49Z 2022-12-01T12:51:49Z 2022-05-20 info:eu-repo/semantics/article Pasadas, F... [et al.]. Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field-Effect Transistors. Adv. Mater. 2022, 34, 2201691. [https://doi.org/10.1002/adma.202201691] https://hdl.handle.net/10481/78229 10.1002/adma.202201691 eng info:eu-repo/grantAgreement/EC/H2020/881603 http://creativecommons.org/licenses/by-nc-nd/4.0/ info:eu-repo/semantics/openAccess Attribution-NonCommercial-NoDerivatives 4.0 Internacional Wiley